Savchenko, D. V.Yatsyk, D. M.Genkin, O. M.Nosachov, Yu. F.Drozdenko, O. V.Moiseenko, V. I.Kalabukhova, E. N.2023-04-062023-04-062023Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study / D. Savchenko et al. Semiconductor Physics Quantum Electronics & Optoelectronics. 2023. Vol. 26, no. 1. P. 030–035.https://ela.kpi.ua/handle/123456789/54329enconductivitySiCcavity perturbation methodactivation energyArticleP. 030-035https://doi.org/10.15407/spqeo26.01.030