Burkovskiy, Yaroslav2025-03-042025-03-042017Burkovskiy, Y. Gallium nitride electronics / Yaroslav Burkovskiy // Science and Technology of the XXI Century : the XVIІІ All-Ukrainian Students R&D Conference Proceeding, Kyiv, 7 December 2017. – Kyiv, 2017. – P. 6–7.2411-3050https://ela.kpi.ua/handle/123456789/72785This article reviews the development and advantages of gallium nitride (GaN) for power electronics. It highlights GaN’s wide bandgap, high carrier mobility, low on-resistance, and superior thermal and high-temperature performance compared to silicon-based devices. The study also emphasizes the benefits of AlGaN/GaN heterostructural FETs in achieving high switching speeds and efficiency, positioning GaN as a promising material for modern compact and efficient power systems.enpower managementpower supplyGallium Nitride (GaN)Wide-bandgap semiconductorGaNArticleР. 6–730.341.1(063)0000-0003-0633-1911