(Інститут відновлюваної енергетики НАНУ, 2021) Makhkamov, Sh.; Makhmudov, Sh. A.; Sulaimоnov, A. A.; Rafikov, A. K.
An experimental study of the kinetics of
photoconductivity of a resistor by impurity centers based on
compensated silicon has been carried out. The parameters
characteristic of the control silicon with radiation impurities are
investigated. The electrical resistances of irradiated n+-n-n+
-structures are changed on temperature for silicon with different
initial samples