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Gallium nitride electronics
(National Technical University of Ukraine «Igor Sikorsky Kyiv Polytechnic Institute», 2017) Burkovskiy, Yaroslav
This article reviews the development and advantages of gallium nitride (GaN) for power electronics. It highlights GaN’s wide bandgap, high carrier mobility, low on-resistance, and superior thermal and high-temperature performance compared to silicon-based devices. The study also emphasizes the benefits of AlGaN/GaN heterostructural FETs in achieving high switching speeds and efficiency, positioning GaN as a promising material for modern compact and efficient power systems.