Gallium nitride electronics
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Дата
2017
Автори
Науковий керівник
Назва журналу
Номер ISSN
Назва тому
Видавець
National Technical University of Ukraine «Igor Sikorsky Kyiv Polytechnic Institute»
Анотація
This article reviews the development and advantages of gallium nitride (GaN) for power electronics. It highlights GaN’s wide bandgap, high carrier mobility, low on-resistance, and superior thermal and high-temperature performance compared to silicon-based devices. The study also emphasizes the benefits of AlGaN/GaN heterostructural FETs in achieving high switching speeds and efficiency, positioning GaN as a promising material for modern compact and efficient power systems.
Опис
Ключові слова
power management, power supply, Gallium Nitride (GaN), Wide-bandgap semiconductor, GaN
Бібліографічний опис
Burkovskiy, Y. Gallium nitride electronics / Yaroslav Burkovskiy // Science and Technology of the XXI Century : the XVIІІ All-Ukrainian Students R&D Conference Proceeding, Kyiv, 7 December 2017. – Kyiv, 2017. – P. 6–7.