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Micro-and nanostructures in modern memory devices
(НТУУ «КПІ», 2011) Mladenov, G.; Spivak, V.; Koleva, E.; Bogdan, A.; Zelensky, S.
Electronic storage devices are an important part of modern information and communication systems, defining the parameters and possibilities of the whole system. In this paper it is shown the operating principle and parameters of dynamic random-access storage media, working as operative memory in computer systems as well as the flash-memories, wide and successive used as input and output of data and to keep it out of information systems.
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Prospects of spin transport electronics
(НТУУ «КПІ», 2011) Mladenov, G.; Koleva, E.; Spivak, V.; Bogdan, A.; Zelensky, S.
This review provides basic information on spintronics. Briefly described the effects on which the development of spintronic nanoscale devices are based: giant magneto-resistance, spin-dependent tunnelling effect, transport of spin-polarized current, the creation of spin polarized current torque for a magnetic switch and the motion of the magnetization of magnetic domains. As a example of successive applications spin-dependent devices are given parameters of magnetic memories based on use of spintronics components. It is shown that such memory is competitive to nowadays standard memories (at 90 nm) and has the po tential for future development (for example, re ducing the critical size to 32 nm).