Перегляд за Автор "Rafikov, A. K."

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    Influence of temperature on photoresistors obtained on the basis of compensated silicon
    (Інститут відновлюваної енергетики НАНУ, 2021) Makhkamov, Sh.; Makhmudov, Sh. A.; Sulaimоnov, A. A.; Rafikov, A. K.
    An experimental study of the kinetics of photoconductivity of a resistor by impurity centers based on compensated silicon has been carried out. The parameters characteristic of the control silicon with radiation impurities are investigated. The electrical resistances of irradiated n+-n-n+ -structures are changed on temperature for silicon with different initial samples