Structural and Parametric Optimization of Bandgap Voltage Reference

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dc.contributor.authorPavlov, L. N.
dc.contributor.authorLebedev, D. Yu.
dc.date.accessioned2023-06-21T13:53:22Z
dc.date.available2023-06-21T13:53:22Z
dc.date.issued2022-06-20
dc.description.abstractAbstract—The article shows the possibility of reducing the temperature coefficient for the bandgap voltage reference (BVR) built on bipolar transistors. To do this, as the first step, it is proposed to divide the temperature range of BVR operation into two intervals. Since the most probable working interval corresponds to the range of positive temperatures, such division makes it possible to halve the temperature coefficient for the most probable working area on condition of an appropriate BVR adjustment. The introduction of weights for BVR optimization involves giving preference to the working interval of positive temperatures. It provides a direction of search for the optimal solution when formalizing the optimization process. The second step involves the proposal of a functional block diagram with compensators of the decline of temperature characteristic. The paper also proposes electric circuits of a typical compensator and the circuits for connecting one and two compensators to uncompensated BVR. This also determines the rule of introducing further compensators, if expedient. The parametric optimization of the proposed BVR circuits and the experimental study of BVR circuit with one compensation link have been performed. The above optimization resulted in a reduced value of temperature coefficient at the level of 2.88 ppm/C for the circuit with one compensator and 1.0 ppm/C for the case of connecting two compensators to BVR circuit that surpasses the latest published achievements. When expanding the temperature range into the area of low temperatures and using additional compensators in accordance with the specified schematic block diagram, we could expect the reduction of the temperature coefficient to 0.25–0.5 ppm/C.uk
dc.description.abstractotherThe subject of this study deals with the class of bandgap voltage references (BVR) that are based on theoretical principles of forbidden zone. Such BVR occupy a special place both as an independent integrated circuit and as an important assembly in a sizable list of integrated circuit nomenclature: analog-digital and digital-analog converters, secondary power supply sources, DC/DC converters, etc. The architecture of these BVR usually contains the voltage source that is proportional to absolute temperature (PTAT) and the voltage source that is complementary to absolute temperature (CTAT). The specified PTAT and CTAT sources, usually, compensate one another for obtaining the constant output voltage only at one point of the temperature range. As the temperature fluctuates with respect to the design point, the reference voltage changes and a magnitude of this change generally increases with the increasing temperature deviation.uk
dc.format.pagerangeP. 365-375uk
dc.identifier.citationPavlov, L. N. Structural and Parametric Optimization of Bandgap Voltage Reference / Pavlov L. N., Lebedev D. Yu. // Radioelectronics and Communications Systems. - 2022. - Vol. 65, No. 7. - P. 365-375.uk
dc.identifier.doihttps://doi.org/10.3103/S0735272722070056
dc.identifier.orcid0000-0001-8273-9607uk
dc.identifier.orcid0000-0001-8672-8366uk
dc.identifier.urihttps://ela.kpi.ua/handle/123456789/57425
dc.language.isoenuk
dc.publisherSpringer Natureuk
dc.publisher.placeNew Yorkuk
dc.relation.ispartofRadioelectronics and Communications Systems, Vol. 65, No. 7, 2022uk
dc.titleStructural and Parametric Optimization of Bandgap Voltage Referenceuk
dc.title.alternativeСтруктурна і параметрична оптимізація джерела опорної напругиuk
dc.typeArticleuk

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