Structural and Parametric Optimization of Bandgap Voltage Reference
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2022-06-20
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Науковий керівник
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Springer Nature
Анотація
Abstract—The article shows the possibility of reducing the temperature coefficient for the bandgap
voltage reference (BVR) built on bipolar transistors. To do this, as the first step, it is proposed to divide the
temperature range of BVR operation into two intervals. Since the most probable working interval
corresponds to the range of positive temperatures, such division makes it possible to halve the
temperature coefficient for the most probable working area on condition of an appropriate BVR
adjustment. The introduction of weights for BVR optimization involves giving preference to the working
interval of positive temperatures. It provides a direction of search for the optimal solution when
formalizing the optimization process. The second step involves the proposal of a functional block
diagram with compensators of the decline of temperature characteristic. The paper also proposes electric
circuits of a typical compensator and the circuits for connecting one and two compensators to
uncompensated BVR. This also determines the rule of introducing further compensators, if expedient.
The parametric optimization of the proposed BVR circuits and the experimental study of BVR circuit
with one compensation link have been performed. The above optimization resulted in a reduced value of
temperature coefficient at the level of 2.88 ppm/C for the circuit with one compensator and 1.0 ppm/C
for the case of connecting two compensators to BVR circuit that surpasses the latest published
achievements. When expanding the temperature range into the area of low temperatures and using
additional compensators in accordance with the specified schematic block diagram, we could expect the
reduction of the temperature coefficient to 0.25–0.5 ppm/C.
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Pavlov, L. N. Structural and Parametric Optimization of Bandgap Voltage Reference / Pavlov L. N., Lebedev D. Yu. // Radioelectronics and Communications Systems. - 2022. - Vol. 65, No. 7. - P. 365-375.